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 Eudyna GaN-HEMT 10W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz Proven Reliability Small and Low Cost Metal Base Package
EMC21L1004GN
High Voltage - High Power GaN-HEMT Power Amplifier Module
DESCRIPTION
The EMC21L1004GN is a high-gain and wide-band 2-stage HIC amplifier module with 50V operation. This module is targeted for high voltage, low current operation in digitally modulated base station. This product is ideally suited not only for WCDMA base station amplifiers but also other HPA while offering ease for use.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC) Rating Item Symbol
Vdd1,2 Vgg1,2 P in Tstg T op
DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power Storage Temperature Operating Case Temperature
RECOMMENDED OPERATING CONDITION (Case Temperature Tc= 25oC) Condition Item Symbol
DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power
ELECTRICAL CHARACTERISTICS (Case Temperature Tc= 25 C) Item Symbol
f GL d-Ga VSWRi
Idd(DC)
r P
im l e
Vdd1,2 Vgg1,2 P in Igg(DC) IM3 Idd
a in
-
0 to +52 -7 to 0 +20 -40 to +100 -20 to +85
y r
o
Unit
V V dBm
oC oC
Unit
V V dBm
50 -3 <10
Condition
Limit
Min. Typ. Max.
2.11 26.0 28.5 0.2 1.5:1 210 6.0 -47.0 200 2.17 31.0 0.5 2.5:1 250 15.0 -45.0 250
Unit
GHz dB dBp_p mA mA dBc mA
Frequency Linear Gain Gain Deviation Input VSWR DC Input Current DC Input Current 3rd Order Intermodulation Distortion Ratio DC Input Current
Vdd1,2=50V Vgg1,2=-3.0V Pin=-10dBm Vdd1,2=50V Vgg1,2=-3.0V Without RF Vdd1,2=50V Vgg1,2=-3.0V Pout=22dBm(Avg.) (Note 1)
Note 1 : IM3 and Idd test condition as follows: IM3&Idd : f0=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg.=8.5dB@0.01% probability(CCDF)) measured over 3.84MHz at f0-10MHz and f1+10MHz. Note 2 : The RF parameters are measured with test fixture.
Edition 1.0 June 2005
1
EMC21L1004GN
High Voltage - High Power GaN-HEMT Power Amplifier Module
Output Power and Drain Efficiency vs. Input Power Vdd1,2=50V Vgg1,2=-3.0V 42 60 2.11GHz 40 2.14GHz 38 50 2.17GHz 36 Output Power [dBm] 34 32 30 28 26 24 22 20 18 Output Power 40
re P
-6 -4 -2 -25 -30 -35 -40 IMD [dBc] -45 -50 -55 -60 -65 -70 -75 -80
2-tone IMD vs. Output Power Vdd1,2=50V Vgg1,2=-3.0V f1=2.135GHz f2=2.145GHz(10MHz Spacing) -20 IM3 IM5 IM7
im l
0 2 4 6
a in
Drain Effi. 8
y r
30 20 10 0
10 12 14 16 18
Input Power [dBm]
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Output Power(average) [dBm]
2
Drain Efficiency [%]
EMC21L1004GN
High Voltage - High Power GaN-HEMT Power Amplifier Module
2-Carrier IMD vs. Output Power Vdd1,2=50V Vgg1,2=-3.0V f1=2.135GHz, f2=2.145GHz(10MHz Spacing) Peak/Avg. = 8.5dB@0.01% Probability(CCDF) -25
-30 -35 -40 IMD [dBc] -45 -50 -55 -60 -65 -70 16 IM3
18
Power Gain and Drain Current vs. Output Power Vdd1,2=50V Vgg1,2=-3.0V f1=2.135GHz, f2=2.145GHz(10MHz Spacing) Peak/Avg. = 8.5dB@0.01% Probability(CCDF) 30 500
28 26 Power Gain [dB] 24 22 20 18 16 14 12 10 16 18 20 22 24 26 28 30 32 Output Power [dBm] Drain Current Power Gain 450 400 Drain Current [mA] 350 300 250 200 150 100 50 0
r P
im l e
20 22 24
a in
IM5 IM7 26 28 30
y r
32
Output Power [dBm]
3
EMC21L1004GN
High Voltage - High Power GaN-HEMT Power Amplifier Module
S-Parameters @ Vdd1,2=50V Vgg1,2=-3.0V f=1 to 3 GHz Zl = Zs = 50 ohm
+50j +25j
10 25
+100j
+10j
50
2.0GHz
+250j
0
2.1 2.0GHz
2.2 2.1 2.2
-10j
-250j
-25j -50j
-100j
2.2
r P
+90
2.1
im l e
S11 S22
2.0GHz
180 40 Scale for |S21|
Freq [GHz] 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 0 2.60 2.70 2.80 2.90 3.00
S12 S21
S11 MAG 0.963 0.953 0.946 0.933 0.914 0.883 0.824 0.729 0.563 0.290 0.046 0.038 0.024 0.010 0.010 0.025 0.041 0.057 0.074 0.093 0.112 0.131 0.362 0.414 0.439 0.468 0.489 0.500 0.504 0.499
a in
ANG 103.7 78.4 53.2 27.6 1.3 -26.3 -56.0 -89.1 -127.9 -177.7 -106.5 -145.5 -143.0 -124.3 -18.9 -3.6 -3.4 -6.3 -9.3 -12.4 -15.8 -19.5 -59.2 -102.3 -125.5 -147.0 -168.4 171.8 151.8 131.8
S21 MAG ANG 0.033 129.4 0.053 96.8 0.090 63.2 0.155 27.7 0.288 -8.7 0.565 -48.4 1.168 -92.2 2.532 -141.8 5.853 159.3 14.167 85.0 27.271 -17.5 27.369 -116.7 27.163 -125.3 26.993 -133.5 26.902 -141.7 26.841 -149.8 26.914 -157.7 26.994 -165.6 27.225 -173.5 27.514 178.3 27.867 170.1 28.300 161.8 34.159 54.8 12.482 -60.2 4.131 -120.6 1.738 -165.4 0.808 157.7 0.418 126.7 0.229 100.4 0.143 75.1
y r
S12 MAG ANG 0.001 -56.2 0.001 -65.9 0.001 -98.3 0.000 -115.3 0.000 -81.2 0.000 8.0 0.001 -30.9 0.001 -61.0 0.000 -28.0 0.001 -4.2 0.005 -70.1 0.004 -129.5 0.004 -130.8 0.004 -137.8 0.004 -141.4 0.004 -145.2 0.004 -145.2 0.004 -151.3 0.004 -150.0 0.004 -157.3 0.004 -162.1 0.004 -166.5 0.004 149.0 0.002 89.7 0.001 110.4 0.001 151.9 0.001 152.9 0.001 123.9 0.001 129.5 0.001 269.6
S22 MAG ANG 0.919 -1.1 0.912 -21.8 0.899 -43.7 0.879 -66.7 0.854 -91.7 0.825 -118.8 0.787 -148.8 0.746 178.2 0.724 141.8 0.760 98.1 0.705 37.9 0.430 -6.3 0.414 -8.4 0.402 -11.0 0.394 -13.7 0.393 -16.1 0.391 -18.8 0.388 -21.2 0.387 -24.7 0.388 -28.6 0.395 -32.8 0.403 -36.8 0.461 -149.0 0.576 43.4 0.702 -19.3 0.787 -56.8 0.826 -87.3 0.844 -112.5 0.855 -134.9 0.864 -154.3
0.4 Scale for |S 12| -90
4


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